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| ILD615 QUAD CHANNEL ILQ615 DUAL CHANNEL FEATURES * Identical Channel to Channel Footprint * Current Transfer Ratio (CTR) Range at IF=10 mA ILD/Q615-1: 40 - 80% Min. ILD/Q615-2: 63 - 125% Min. ILD/Q615-3: 100 - 200% Min. ILD/Q615-4: 160 - 320% Min. * Guaranteed CTR at IF=1 mA ILD/Q615-1: 13% Min. ILD/Q615-2: 22% Min. ILD/Q615-3: 34% Min. ILD/Q615-4: 56% Min. * High Collector-Emitter Voltage BVCEO=70 V * Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Isolation Test Voltage from Double Molded Package, 5300 VACRMS * UL Approval #E52744 * VDE #0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage ................................................ 6 V Forward Current ........................................... 60 mA Surge Current .................................................1.5 A Power Dissipation ...................................... 100 mW Derate Linearly from 25C ................... 1.33 mW/C Detector Collector-Emitter Reverse Voltage .................. 70 V Emitter-Collector Reverse Voltage .................... 7 V Collector Current .......................................... 50 mA Collector Current (t <1 ms) .........................100 mA Power Dissipation ...................................... 150 mW Derate Linearly from 25C........................ 2 mW/C Package Storage Temperature................... -55C to +150C Operating Temperature ............... -55C to +100C Junction Temperature.................................... 100C Soldering Temperature (2 mm distance from case bottom) ........... 260C Package Power Dissipation, ILD615.......... 400 mW Derate Linearly from 25C.................. 5.33 mW/C Package Power Dissipation, ILQ615 ......... 500 mW Derate Linearly from 25C................. 6.67 mW/C Isolation Test Voltage (t=1 sec.)........ 5300 VACRMS Creepage ............................................... 7 mm min. Clearance............................................... 7 mm min. Isolation Resistance VIO=500 V, TA=25C ............................... 1012 VIO=500 V, TA=100C ............................. 1011 .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) PHOTOTRANSISTOR OPTOCOUPLER Dimensions in inches (mm) 4 3 2 1 Pin One I.D. Anode 1 8 7 6 5 Collector Emitter Collector Emitter .268 (6.81) .255 (6.48) 5 6 7 8 Cathode 2 Anode 3 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) Cathode 4 .150 (3.81) .130 (3.30) .305 Typ. (7.75) Typ. .135 (3.43) .115 (2.92) 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 10 Typ. 3-9 .012 (.30) .008 (.20) Pin One I.D. Anode 1 Cathode 2 Anode 3 16 Collector 15 Emitter 14 Collector 13 Emitter 12 Collector 11 Emitter 10 Collector 9 Emitter .268 (6.81) .255 (6.48) Cathode 4 Anode 5 Cathode 6 Anode 7 Cathode 8 .150 (3.81) .130 (3.30) .305 Typ. (7.75) Typ. 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 10 Typ. 3-9 .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) DESCRIPTION The ILD/Q615 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a Withstand Test Voltage of 7500 VACPEAK and a Working Voltage of 1700 VACRMS. The binned min./max. and linear CTR characteristics combined with the TRIOS (TRansparent IOn Shield) field-effect process make these devices well suited for DC or AC voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD/Q615 can be used in medium speed data I/O and control systems. The binned min./max. CTR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a CMOS logic is enhanced by the guaranteed CTR at an IF=1 mA. See Appnote 45, "How to Use Optocoupler Normalized Curves." 5-1 Characteristics, TA=25C Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Collector-Emitter Leakage Current, -1, -2 Collector-Emitter Leakage Current, -3, -4 Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Thermal Resistance, Junction to Lead Package Transfer Characteristics Channel/Channel CTR Match ILD/Q615-1 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-2 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-3 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio ILD/Q615-4 Saturated Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output Low Common Mode Coupling Capacitance Package Capacitance Insulation Resistance Channel to Channel Isolation CMH CML CCM CI-O RS 500 0.8 1014 5000 5000 0.01 V/s V/s pF pF VAC VIO=0 V, f=1 MHz VIO=500 V, TA=25C VCM=50 VP-P, RL=1 k, IF=0 mA VCM=50 VP-P, RL=1 k, IF=10 mA CTRCEsat CTRCE CTRCE 160 56 100 200 90 320 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 100 34 60 150 70 200 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 63 22 40 80 45 125 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRCEsat CTRCE CTRCE 40 13 25 60 30 80 % % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=5 V IF=1 mA, VCE=5 V CTRX/CTRY 1 to 1 2 to 1 IF=10 mA, VCE=5 V CCE ICEO ICEO BVCEO BVECO RTHJL 70 7 500 6.8 2 5 50 100 pF nA nA V V C/W VCE=5 V, f=1 MHz VCE=10 V VCE=10 V ICE=0.5 mA IE=0.1 mA VF VBR IF CO RTHJL 1 6 1.15 30 0.01 25 750 10 1.3 V V A pF C/W IF=10 mA IR=10 A VR=6 V VR=0 V, f=1 MHz Min. Typ. Max. Unit Condition ILD/Q615 5-2 Switching Times Figure 1. Non-saturated switching timing VCC=5 V IF=10 mA F=10 KHz, DF=50% VO RL=75 Parameter tON tR tOFF tF tPHL Propagation H-L (50% of VPP) tPHL Propagation L-H Typ. 3.0 2.0 2.3 2.0 1.1 2.5 Unit s s s s s s Test Condition RL=75 IF=10 mA VCC=5 V Figure 2. Saturated switching timing F=10 KHz, DF=50% VCC=5 V RL VO Parameter -1 IF=20 mA Typ. tON tR 3.0 2.0 18 11 1.6 -1,-3 IF=10 mA Typ. 4.3 2.8 25 14 2.6 -4 IF=5mA Typ. 6.0 4.6 25 15 5.4 Unit s s s s s RL=1 VCC=5 V VTH=1.5 V Test Condition Figure 3. Non-saturated switching timing IF tOFF tF tPHL Propagation H-L tPLH Propagation L-H tPHL V0 tPLH tS 50% 8.6 7.2 7.4 s Figure 5. Maximum LED current versus ambient temperature IF - Maximum LED Current - mA 120 100 80 60 40 20 0 --60 -40 TJ (MAX)=100C tD tR tF Figure 4. Saturated switching timing IF Ta - Ambient Temperature - C -20 0 20 40 60 80 100 VO tD tR tPLH VTH=1.5 V tF tPHL tS ILD/Q615 5-3 Figure 6. Maximum LED power dissipation 200 Figure 10. Maximum collector current versus collector voltage 1000 PLED - LED Power - mW 150 Ice - Collector Current - mA 100 Rth = 500C/W 100 10 50 25C 50C 75C 90C 1 0 --60 -40 Ta - Ambient Temperature - C -20 0 20 40 60 80 100 .1 .1 1 10 Vce - Collector-Emitter Voltage - V 100 Figure 7. Forward voltage versus forward current 1.4 VF - Forward Voltage - V Figure 11. Normalization factor for non-saturated and saturated CTR TA=25C versus if 2.0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C CTRNF - Normalized CTR Factor Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 Ta = 25C 0.0 .1 1 10 IF - LED Current - mA 100 Ta = 25C Ta = 85C 1 10 IF - Forward Current - mA 100 Figure 8. Peak LED current versus pulse detection, Tau 10000 Duty Factor If(pk) - Peak LED Current - mA .005 .01 .02 .05 .1 .2 Figure 12. Normalization factor for non-saturated and saturated CTR TA=50C versus if 2.0 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 Ta = 50C 0.0 .1 1 10 IF - LED Current - mA 100 1000 t DF = /t 100 .5 10 10-6 10 -5 10-4 10 -3 10-2 10 -1 10 0 10 1 t - LED Pulse Duration - s Figure 9. Maximum detector power dissipation 200 P - Detector Power - mW DET Figure 13. Normalization factor for non-saturated and saturated CTR TA=70C versus if 2.0 CTRNF - Normalized CTR Factor CTRNF - Normalized CTR Factor 150 Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 100 50 0.5 NCTRce(sat) Ta = 70C 0 -60 -40 -20 0 20 40 60 Ta - Ambient Temperature - C 80 100 0.0 .1 1 10 100 IF - LED Current - mA ILD/Q615 5-4 Figure 14. Normalization factor for non-saturated and saturated CTR TA=85C versus if 2.0 CTRNF - Normalized CTR Factor Figure 17. -1 Propagation delay versus collector load resistor 1000 tPLH - Propagat ion Low- High - s 4.0 Ta = 25C, IF = 10mA Vcc = 5V, Vth = 1.5V 100 tPLH 10 tPHL 1.5 1 .1 1.0 100 3.0 2.5 2.0 3.5 tPHL - Propagation High- Low - s Normalized to: Vce = 10V, IF = 5mA, Ta = 25C 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 0.5 NCTRce(sat) Ta=100C Ta = 100C 0.0 .1 1 10 IF - LED Current - mA 100 1 10 RL - Load Resistor - K Figure 15. Collector-emitter current versus temperature and LED current 35 Figure 18. -2, -3 Propagation delay versus collector load resistor 1000 tPLH - Propagation Low-High - s 2.5 tPHL - Propagation High-Low - s Ice - Collector Current - mA 30 25 20 15 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 25C 85C 70C 50C Ta = 25C, IF = 10mA Vcc = 5V, Vth = 1.5V 100 tPLH 2.0 10 tPHL 1.5 1 .1 1 10 RL - Collector Load Resistor - K 1.0 100 Figure 16. Collector-emitter leakage versus temperature Iceo - Collector-Emitter - nA Figure 19. -4 Propagation delay versus collector load resistor 1000 2.5 Ta = 25C, IF = 10mA Vcc = 5V, Vth = 1.5V 100 tPLH 2.0 10 1 Vce = 10V TYPICAL 10 0 10 -1 10 -2 -20 10 tPHL 1 .1 1.5 0 20 40 60 80 100 Ta - Ambient Temperature - C 1 10 RL - Collector Load Resistor - K 1.0 100 tPHL - Propagation High-Low - s tPLH - Propagation Low-High - s 5 10 4 10 3 10 10 2 ILD/Q615 5-5 |
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